The sheet resistance (Rs), and hence electrical resistivity of diferent thicknesses (200–320 nm) of As30Te60Ga10 flms was measured from 490 to 600 K. Crystallization kinetics parameters of the As30Te60Ga10 flms were determined in terms of the evaluated Rs for various flm thicknesses. The investigated kinetics parameters were compared to obtained experimental data from diferential scanning calorimetry as well as were confrmed by the X-ray difraction and scanning electron microscope. It was found that the exothermic heat fow can be obtained from the measured surface resistance, with high accuracy, for all As30Te60Ga10 flms. The crystallization kinetic parameters of As30Te60Ga10 flms were determined under non-isothermal and isoconversional conditions. Besides, the activation energy required for the amorphous-crystalline transition of As30Te60Ga10 was estimated and various models of the crystallization kinetics were applied. It was observed that the Šesták-Berggren equation is more appropriate, compared to the Johnson–Mehl–Avrami equation, for describing the kinetics of crystallization in As30Te60Ga10. The obtained results could give an experimental basis for the optimization of phase-change memory in the As–Te–Ga system in terms of the sheet resistance measurement and the possibility of its application for various phase-change materials.